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Transistors with built-in Resistor
UNR31A4
Silicon PNP epitaxial planar transistor
Unit: mm
For digital circuits Features
* Suitable for high-density mounting and downsizing of the equipment * Contribute to low power consumption
0.33+0.05 -0.02 3
0.10+0.05 -0.02
(0.40) (0.40) 0.800.05 1.200.05
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating -50 -50 -80 100 125 -55 to +125 Unit V V mA mW C C
5
0.15 min.
0.23+0.05 -0.02
1
2
0 to 0.01
0.520.03
5
1: Base 2: Emitter 3: Collector SSSMini3-F1 Package
Marking Symbol: CK Internal Connection
R1 (10 k) B R2 (47 k)
C
E
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1 / R 2 fT VCB = -10 V, IE = 1 mA, f = 200 MHz Conditions IC = -10 A, IE = 0 IC = -2 mA, IB = 0 VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 VCE = -10 V, IC = -5 mA IC = -10 mA, IB = - 0.3 mA VCC = -5 V, VB = - 0.5 V, RL = 1 k VCC = -5 V, VB = -2.5 V, RL = 1 k -30% 0.17 10 0.21 80 -4.9 - 0.2 +30% 0.25 80 - 0.25 Min -50 -50 - 0.1 - 0.5 - 0.2 Typ Max Unit V V A A mA V V V k MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0.15 max.
0.15 min.
0.800.05
1.200.05
Publication date: November 2002
SJH00075AED
1
UNR31A4
PT Ta
120
IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
-90 IB = -1.0 mA Ta = 25C - 0.9 mA -80 - 0.8 mA - 0.7 mA - 0.5 mA -70 - 0.6 mA - 0.4 mA -60 - 0.3 mA -50 - 0.2 mA -40 -30 -20 -10 - 0.1 mA
-10
VCE(sat) IC
Total power dissipation PT (mW)
100
80
Collector current IC (mA)
-1
60
Ta = 85C -25C 25C
40
- 0.1
20
0
0
20
40
60
80
100 120 140
0
0
-2
-4
-6
-8
-10
-12
- 0.01 -1
IC / IB = 10 -10 -100 -1 000
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
hFE IC
VCE = -10 V Ta = 85C 25C 200 -25C
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
10 f = 1 MHz Ta = 25C
-100 VO = -5 V Ta = 25C
IO VIN
300
Forward current transfer ratio hFE
250
Output current IO (mA)
1
150
-10
100
50
0 -1
-10
-100
0
-10
-20
-30
-40
-1
0
-1
-2
-3
-4
-5
-6
Collector current IC (mA)
Collector-base voltage VCB (V)
Input voltage VIN (V)
VIN IO
-100 VO = - 0.2 V Ta = 25C
Input voltage VIN (V)
-10
-1
- 0.1 - 0.1
-1
-10
-100
Output current IO (mA)
2
SJH00075AED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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